Sourced evidence
HBM capacity constrained more by TSV/die-stacking/test yield across the process than by raw wafer supply
Industry analysts say HBM memory output is limited by four successive yield steps: DRAM die yield, through-silicon via processing, stacking and bonding of 8-12 dies, and final stack testing. As a result, HBM3-class memory uses roughly 3x the wafers of standard DRAM. As of mid-2026, analysts rank TSMC's CoWoS packaging as the top constraint on AI chip output (expected to ease by H2 2027), followed by memory makers' HBM stacking capacity (by mid-2027).
- Type
- Research
- Published
- April 1, 2026
- Confidence
- 58/100
- Filed under
- NVIDIA
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Cite this
InsightNodes, "HBM capacity constrained more by TSV/die-stacking/test yield across the process than by raw wafer supply" (NVIDIA). Source: SemiEngineering / SiliconAnalysts, April 1, 2026, https://semiengineering.com/tsv-complexity-leads-to-manufacturing-bottleneck/. https://insightnodes.com/claims/e/nvidia-hbm-tsv-stacking-yield-bottleneck-2026 (accessed October 29, 2026).
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